Single-chip switch spreads GbE connectivity

As a result, home networks will need to transition from FE to GbE connectivity to create the wired infrastructure necessary to support increased network speeds

Broadcom has released the industry's first 65nm five-port gigabit Ethernet (GbE) switch in a single-chip design that enables the ubiquitous deployment of GbE connectivity to consumer electronic devices and home networking equipment. 65nm process technology allowed Broadcom to develop an intelligent switching solution with the industry's smallest footprint, achieving unprecedented performance and a 30% reduction in power versus previous generations of Broadcom silicon.

The desire to share bandwidth-intensive content across a large number of computers and consumer electronics devices puts a strain on home networks.

This is particularly true in the WLAN market where the migration from 802.11g to 802.11n Wi-Fi technology will boost network speeds in excess of 100Mbit/s.

As a result, home networks will need to transition from FE to GbE connectivity to create the wired infrastructure necessary to support these increased network speeds.

'Our new switch takes the digital home to the next level by enabling the deployment of Gigabit Ethernet in any consumer product that currently has Fast Ethernet', said Martin Lund, Vice President and General Manager of Broadcom's Network Switching line of business.

The BCM53115 GbE switch provides better network performance in a smaller, cooler device.

It offers a comprehensive Layer 2 (L2) feature set, support for digital subscriber line (DSL)/cable modem and wireless LAN (WLAN) connectivity.

It can provide intelligent traffic management through Broadcom's compact field processor (CFP), which provides quality of service (QoS) and ensures a better user experience.

The CFP makes it possible for consumers to share HD video, download music to a handheld multimedia player, transfer photo libraries and make VoIP calls simultaneously across the same network.

The 65nm process is the most advanced lithographic node for manufacturing semiconductors in large volumes today.

It provides significant benefits over 90 and 130nm processes by enabling lower power consumption, smaller size, higher yields and higher levels of integration.